Kingston Technology ValueRAM memory module 4 GB 1 x 4 GB DDR4 3200 MT/s

Kingston Technology ValueRAM memory module 4 GB 1 x 4 GB DDR4 3200 MT/s

26.42 CAD

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Kingston Technology ValueRAM memory module 4 GB 1 x 4 GB DDR4 3200 MT/s
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Kingston Technology ValueRAM memory module 4 GB 1 x 4 GB DDR4 3200 MT/s

Part number KVR32S22S6/4
26.42 CAD
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Specifications
Weight
0.15 kg
Shipping + Returns

Shipping Policy

Ships to: Canada & USA via UPS, DHL, & Canada Post.

Fast Dispatch: Orders before 2 PM EST process same-day.

Options: Standard (Ground) and Express (Air) shipping available.

Heavy Items: Heavy freight usually requires1-2 extra days for Processing

Returns & Refunds

Return Period: Request a return within 14 days of delivery.

Restocking Fee: 20% fee applies to non-defective/change-of-mind returns.

Condition: Items must be returned in original packaging (New or Like New).

Final Sale: Software, licenses, and special orders cannot be returned.

  • Power Supply: VDD = 1.2V Typical
  • VDDQ = 1.2V Typical
  • VPP = 2.5V Typical
  • VDDSPD = 2.2V to 3.6V
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Low-power auto self refresh (LPASR)
  • Data bus inversion (DBI) for data bus
  • On-die VREFDQ generation and calibration
  • Single-rank
  • On-board I2 serial presence-detect (SPD) EEPROM
  • 8 internal banks; 2 groups of 4 banks each
  • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
  • Selectable BC4 or BL8 on-the-fly (OTF)
  • Fly-by topology
  • Terminated control command and address bus
  • PCB: Height 1.18” (30.00mm)
  • RoHS Compliant and Halogen-Free
ValueRAM, Kingston’s industry standard memory, delivers award-winning performance and legendary Kingston reliability. When you know what you want, you want ValueRAM.
Memory
Buffered memory type Unregistered (unbuffered)
Internal memory 4 GB
Internal memory type DDR4
Component for Laptop
ECC No
Memory layout (modules x size) 1 x 4 GB
Memory form factor 260-pin SO-DIMM
CAS latency 22
Memory voltage 1.2 V
Lead plating Gold
Row cycle time 45.75 ns
Refresh row cycle time 350 ns
Row active time 32 ns
Features
Buffered memory type Unregistered (unbuffered)
Internal memory 4 GB
Internal memory type DDR4
Component for Laptop
ECC No
Memory layout (modules x size) 1 x 4 GB
Memory form factor 260-pin SO-DIMM
CAS latency 22
Memory voltage 1.2 V
Lead plating Gold
Row cycle time 45.75 ns
Refresh row cycle time 350 ns
Row active time 32 ns
Country of origin Taiwan
Harmonized System (HS) code 84733020
Memory data transfer rate 3200 MT/s
Operational conditions
Operating temperature (T-T) 0 - 85 °C
Storage temperature (T-T) -55 - 100 °C
Technical details
Doesn't contain Halogen
Compliance certificates RoHS
Sustainability
Doesn't contain Halogen
Weight & dimensions
Width 2.74" (69.6 mm)
Height 1.18" (30 mm)
Logistics data
Harmonized System (HS) code 84733020
Other features
Country of origin Taiwan
Harmonized System (HS) code 84733020

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