Kingston Technology KSM32RS8/8HE memory module 8 GB 1 x 8 GB DDR4 3200 MT/s ECC

Kingston Technology KSM32RS8/8HE memory module 8 GB 1 x 8 GB DDR4 3200 MT/s ECC

155.20 CAD

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Kingston Technology KSM32RS8/8HE memory module 8 GB 1 x 8 GB DDR4 3200 MT/s ECC
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Kingston Technology KSM32RS8/8HE memory module 8 GB 1 x 8 GB DDR4 3200 MT/s ECC

Part number KSM32RS8/8HE
155.20 CAD
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Specifications
Weight
0.238 kg
Shipping + Returns

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Ships to: Canada & USA via UPS, DHL, & Canada Post.

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Options: Standard (Ground) and Express (Air) shipping available.

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Returns & Refunds

Return Period: Request a return within 14 days of delivery.

Restocking Fee: 20% fee applies to non-defective/change-of-mind returns.

Condition: Items must be returned in original packaging (New or Like New).

Final Sale: Software, licenses, and special orders cannot be returned.

  • Power Supply: VDD = 1.2V
  • VDDQ = 1.2V
  • VPP = 2.5V
  • VDDSPD = 2.41V to 2.75V
  • Functionality and operations comply with the DDR4 SDRAM datasheet
  • 16 internal banks
  • Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
  • Data transfer rates: PC4-3200, PC4-2933, PC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
  • Bi-Directional Differential Data Strobe
  • 8 bit pre-fetch
  • Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
  • Supports ECC error correction and detection
  • On-Die Termination (ODT)
  • Temperature sensor with integrated SPD
  • This product is in compliance with the RoHS directive
  • Per DRAM Addressability is supported
  • Internal Vref DQ level generation is available
  • Write CRC is supported at all speed grades
  • CA parity (Command/Address Parity) mode is supported
Kingston's KSM32RS8/8HE is a 1G x 72-bit (8GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM) registered w/ parity, 1Rx8, ECC, memory module, based on nine 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 288-pin DIMM uses gold contact fingers.
Design
JEDEC standard Yes
Memory
Buffered memory type Registered (buffered)
Internal memory 8 GB
Internal memory type DDR4
Component for Server
ECC Yes
Memory layout (modules x size) 1 x 8 GB
Memory form factor 288-pin DIMM
CAS latency 22
Memory voltage 1.2 V
Module configuration 1024M x 72
Row cycle time 45.75 ns
Row active time 32 ns
SPD profile Yes
Memory ranking 1
Programming power voltage (VPP) 2.5 V
Features
Buffered memory type Registered (buffered)
Internal memory 8 GB
Internal memory type DDR4
Component for Server
ECC Yes
Memory layout (modules x size) 1 x 8 GB
Memory form factor 288-pin DIMM
CAS latency 22
Memory voltage 1.2 V
Module configuration 1024M x 72
Row cycle time 45.75 ns
Row active time 32 ns
SPD profile Yes
Memory ranking 1
Programming power voltage (VPP) 2.5 V
JEDEC standard Yes
Memory data transfer rate 3200 MT/s
Operational conditions
Operating temperature (T-T) 0 - 85 °C
Storage temperature (T-T) -55 - 100 °C
Technical details
Compliance certificates RoHS
Weight & dimensions
Width 5.25" (133.3 mm)
Height 1.23" (31.2 mm)

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