Kingston Technology KSM32SES8/16MF memory module 16 GB 1 x 16 GB DDR4 3200 MT/s ECC

Kingston Technology KSM32SES8/16MF memory module 16 GB 1 x 16 GB DDR4 3200 MT/s ECC

220.74 CAD

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Kingston Technology KSM32SES8/16MF memory module 16 GB 1 x 16 GB DDR4 3200 MT/s ECC
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Kingston Technology KSM32SES8/16MF memory module 16 GB 1 x 16 GB DDR4 3200 MT/s ECC

Part number KSM32SES8/16MF
Sale price  220.74 CAD Regular price  221.63 CAD
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Specifications
Weight
0.234 kg
Shipping + Returns

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Return Period: Request a return within 14 days of delivery.

Restocking Fee: 20% fee applies to non-defective/change-of-mind returns.

Condition: Items must be returned in original packaging (New or Like New).

Final Sale: Software, licenses, and special orders cannot be returned.

  • Functionality and operations comply with the DDR4 SDRAM datasheet
  • 16 internal banks
  • Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
  • Bi-Directional Differential Data Strobe
  • 8 bit pre-fetch
  • Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
  • Supports ECC error correction and detection
  • On-Die Termination (ODT)
  • Temperature sensor with integrated SPD
  • This product is in compliance with the RoHS directive
  • Per DRAM Addressability is supported
  • Internal Vref DQ level generation is available
  • Write CRC is supported at all speed grades
  • CA parity (Command/Address Parity) mode is supported
Kingston's KSM32SES8/16MF is a 2G x 72-bit (16GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM) w/ parity, 1Rx8, ECC, memory module, based on nine 2G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 260-pin SODIMM
uses gold contact fingers.
Design
JEDEC standard Yes
Memory
Buffered memory type Unregistered (unbuffered)
Internal memory 16 GB
Internal memory type DDR4
Component for Laptop
ECC Yes
Memory layout (modules x size) 1 x 16 GB
Memory form factor 260-pin SO-DIMM
CAS latency 22
Memory voltage 1.2 V
Lead plating Gold
Module configuration 2048M x 72
Row cycle time 45.75 ns
Refresh row cycle time 350 ns
Row active time 32 ns
SPD profile Yes
Memory ranking 1
Programming power voltage (VPP) 2.5 V
Features
Buffered memory type Unregistered (unbuffered)
Internal memory 16 GB
Internal memory type DDR4
Component for Laptop
ECC Yes
Memory layout (modules x size) 1 x 16 GB
Memory form factor 260-pin SO-DIMM
CAS latency 22
Memory voltage 1.2 V
Lead plating Gold
Module configuration 2048M x 72
Row cycle time 45.75 ns
Refresh row cycle time 350 ns
Row active time 32 ns
SPD profile Yes
Memory ranking 1
Programming power voltage (VPP) 2.5 V
JEDEC standard Yes
Harmonized System (HS) code 84733020
Memory data transfer rate 3200 MT/s
Operational conditions
Operating temperature (T-T) 0 - 85 °C
Storage temperature (T-T) -55 - 100 °C
Technical details
Doesn't contain Halogen
Compliance certificates RoHS
Sustainability
Doesn't contain Halogen
Weight & dimensions
Width 2.74" (69.6 mm)
Depth 0.146" (3.7 mm)
Height 1.18" (30 mm)
Logistics data
Harmonized System (HS) code 84733020
Other features
Harmonized System (HS) code 84733020

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